HomeJapanMitsubishi Electric Unveils Two New XB Series HVIGBT Modules

Mitsubishi Electric Unveils Two New XB Series HVIGBT Modules

Mitsubishi Electric Unveils Two New XB Series HVIGBT Modules

Mitsubishi Electric Corporation announced that it will launch two new modules in its 4.5kV/1,200A XB Series of high-voltage IGBT power devices on December 9. The new modules include a standard-isolation version (6.0kVrms) and a high-isolation version (10.2kVrms).

These power semiconductors offer strong moisture resistance, making them more efficient and reliable for inverters used in large industrial equipment, such as railcars. They are designed to perform well in tough and outdoor environments.

Mitsubishi Electric will showcase the new modules at the 40th Nepcon Japan R&D and Manufacturing Show in Tokyo from January 21–23, 2026. They will also be displayed at exhibitions in North America, Europe, China, India, and other regions.

The new modules use IGBT technology that includes Mitsubishi Electric’s own RFC (Relaxed Field of Cathode) diode and CSTBT (Carrier-Stored Trench-Gate Bipolar Transistor) structure. These advanced designs help improve performance and efficiency.

By introducing new methods for electric field relaxation and surface charge control, Mitsubishi Electric was able to shrink the chip’s termination area by about 30%. At the same time, the new design offers 20 times higher moisture resistance compared to existing products.

The updated module also cuts total switching loss by around 5% versus previous models. Additionally, its reverse-recovery safe-operating area (RRSOA) is about 2.5 times larger, making it more robust and reliable during operation.

Because these modules make inverters in large industrial machines work more efficiently and reliably — even in changing or outdoor environments — they help improve overall performance.

With better efficiency comes lower energy use, which means these modules can support efforts toward carbon neutrality by reducing environmental impact.

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